Shallow donors in the triple-graded quantum well under the hydrostatic pressure and external fields
作者： E. Kasapoglu , H. Sari , I. Sökmen
DOI: 10.1016/J.PHYSB.2005.11.155
关键词:
摘要: The binding energy of the donor in triple-graded GaAs-(Ga,Al)As quantum well under hydrostatic pressure, electric and magnetic fields are calculated by using a variational approach. results have been obtained presence applied along growth direction as function impurity position without consideration mass mismatch or dielectric mismatch.
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