Stability and Conformation of Silicon-Carbon Compounds. A Case Study of SiC2, Si2C and Si3

作者: Jens Oddershede , John R. Sabine , Geerd H. F. Diercksen

DOI: 10.1007/978-94-009-3781-9_29

关键词:

摘要: We discuss the binding in C2, SiC, Si2, C3, SiC2, Si2C and Si3 molecules terms of an orbital picture. Walsh diagrams are used to give understanding geometry triatomic their ground excited states. show that introduction silicon atoms homologous series tends decrease strength bonds make compounds more stable bent conformation.

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