作者: Jens Oddershede , John R. Sabine , Geerd H. F. Diercksen
DOI: 10.1007/978-94-009-3781-9_29
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摘要: We discuss the binding in C2, SiC, Si2, C3, SiC2, Si2C and Si3 molecules terms of an orbital picture. Walsh diagrams are used to give understanding geometry triatomic their ground excited states. show that introduction silicon atoms homologous series tends decrease strength bonds make compounds more stable bent conformation.