Band gap energies of bulk, thin-film, and epitaxial layers of CuInSe2 and CuGaSe2
作者： S. Chichibu , T. Mizutani , K. Murakami , T. Shioda , T. Kurafuji
DOI: 10.1063/1.366588
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摘要: Band gap and excitonic resonance energies of high-quality bulk single crystals, polycrystalline thin films, epitaxial layers CuInSe2 CuGaSe2 were determined as a function temperature by means photoreflectance, optical absorption (OA), photoluminescence measurements. OA spectra fit including from low up to room (RT). The band energy 1.032 eV free exciton (FE) 1.024 obtained at RT for strain-free giving an binding 7.5 meV. both was found be essentially independent the molar ratio Cu group-III atom (Cu/III) near-stoichiometric Cu-rich samples. disappearance FE in In-rich (Cu/In<0.88) films explained plasma screening Coulomb interactions. A slight decrease attributed degradation film quality such high-density defects, grains, structural disordering. fundamental strained epilayers shown due in-plane biaxial tensile strain.
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