Controlling solidification front shape and thermal stress in growing quasi-single-crystal silicon ingots: Process design for seeded directional solidification

摘要: Abstract To control the solidification front shape and thermal stress in growing silicon ingot reduce small-grain region at its periphery, a moving insulation partition block was designed an industrial seeded directional furnace for quasi-single-crystal ingots. We propose several process designs of block. A transient global model heat transfer which all types are included established to investigate field, evolution, ingot. Corresponding experiments were conducted validate simulation results through relationship between region. It found that can significantly influence shape, during process. The design is feasible periphery solidified favorable obtained simultaneously achieve small low