Chapter 54 Enhancement of dislocation mobility in semiconducting crystals by electronic excitation

作者: K. Maeda , S. Takeuchi

DOI: 10.1016/S1572-4859(96)80009-X

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摘要: Publisher Summary This chapter discusses the enhancement of dislocation mobility in semiconducting crystals by electronic excitation. Ordinary factors that govern plasticity crystalline matter are (1) temperature, (2) content foreign atoms, and (3) density defects. The roles these metallurgical glide well understood not only metals, but also non-metallic crystals. However, it is commonly known non-metals an additional factor, state crystals, significantly affects crystal: doping electronically active impurities alters dislocations semiconductors, application electrical field induces change crystal strength, excitation—such as caused, for instance, light illumination—brings about remarkable effects on motion Dislocations covalent differ from those metallic various respects: along core having edge component, dangling bonds appear at every atomic distance may be reconstructed to form pairs bonds, localized states accompany atoms can produce deep energy levels bandgap, Peierls potential first kind second high because covalency interatomic bonding, (4) compound a variety types exists depending structure core.

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