Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy
作者： Qinsheng Zhu , Guoyi Zhang , Wei Wei , Zhixin Qin , Shunfei Fan
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摘要: A sample of the β-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation on a sapphire substrate. X-ray diffraction measurements show that β-Ga2O3 layer was formed epitaxially GaN. The valence band offset is measured photoelectron spectroscopy. It demonstrated β-Ga2O3/GaN structure 1.40 ± 0.08 eV.
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