Thermodynamical properties of III–V nitrides and crystal growth of GaN at high N2 pressure

摘要: Abstract In this paper, thermodynamical properties of AIN, GaN and InN are considered. It is shown that significant differences in melting conditions, thermal stability solubilities liquid group III metals lead to different possibilities growing crystals from high temperature solutions, at N 2 pressure up 20 kbar. the best conditions for crystal growth available can be achieved GaN. High quality 6–10 mm single have been grown 60–150 h processes. The mechanisms nucleation discussed on basis experimental results. crystallization AlN less efficient due relatively low solubility Al. Possibility strongly limited since compound loses its T > 600°C, even GPa pressure. first material used homoepitaxial layer deposition. Both MOCVD MBE methods successfully applied. Structural, electrical optical both layers reviewed.