Control of the Gas Flow in an Industrial Directional Solidification Furnace for Production of High Purity Multicrystalline Silicon Ingots

作者: Lijun Liu , Xiaofang Qi , Wencheng Ma , Zaoyang Li , Yunfeng Zhang

DOI: 10.1155/2015/513639

关键词:

摘要: A crucible cover was designed as gas guidance to control the flow in an industrial directional solidification furnace for producing high purity multicrystalline silicon. Three designs were compared investigate their effect on impurity transport and contamination of silicon melt. Global simulations coupled oxygen (O) carbon (C) carried out predict SiO CO gases well O C distributions Cases with without chemical reaction surfaces investigated. It found that design has little concentration melt; however, it significantly influences chamber For covers made metal or a coating surfaces, optimal can produce melt free contamination. Even graphite coating, be reduced by one order magnitude. The simulation results demonstrate method impurities design.

参考文章(17)
Ying-Yang Teng, Jyh-Chen Chen, Chung-Wei Lu, Chi-Yung Chen, Numerical investigation of oxygen impurity distribution during multicrystalline silicon crystal growth using a gas flow guidance device Journal of Crystal Growth. ,vol. 360, pp. 12- 17 ,(2012) , 10.1016/J.JCRYSGRO.2011.12.064
Xu Ma, Lili Zheng, Hui Zhang, Bo Zhao, Cheng Wang, Fenghua Xu, Thermal system design and optimization of an industrial silicon directional solidification system Journal of Crystal Growth. ,vol. 318, pp. 288- 292 ,(2011) , 10.1016/J.JCRYSGRO.2010.10.102
B. Gao, X.J. Chen, S. Nakano, K. Kakimoto, Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells Journal of Crystal Growth. ,vol. 312, pp. 1572- 1576 ,(2010) , 10.1016/J.JCRYSGRO.2010.01.034
Hitoshi Matsuo, R. Bairava Ganesh, Satoshi Nakano, Lijun Liu, Yoshihiro Kangawa, Koji Arafune, Yoshio Ohshita, Masafumi Yamaguchi, Koichi Kakimoto, Thermodynamical analysis of oxygen incorporation from a quartz crucible during solidification of multicrystalline silicon for solar cell Journal of Crystal Growth. ,vol. 310, pp. 4666- 4671 ,(2008) , 10.1016/J.JCRYSGRO.2008.08.045
Xin Liu, Bing Gao, Koichi Kakimoto, Numerical investigation of carbon contamination during the melting process of Czochralski silicon crystal growth Journal of Crystal Growth. ,vol. 417, pp. 58- 64 ,(2015) , 10.1016/J.JCRYSGRO.2014.07.040
Ying-Yang Teng, Jyh-Chen Chen, Chung-Wei Lu, Hsueh-I Chen, Chuck Hsu, Chi-Yung Chen, Effects of the furnace pressure on oxygen and silicon oxide distributions during the growth of multicrystalline silicon ingots by the directional solidification process Journal of Crystal Growth. ,vol. 318, pp. 224- 229 ,(2011) , 10.1016/J.JCRYSGRO.2010.11.110
Bing Gao, Satoshi Nakano, Koichi Kakimoto, Reduction of Oxygen Impurity in Multicrystalline Silicon Production International Journal of Photoenergy. ,vol. 2013, pp. 908786- ,(2013) , 10.1155/2013/908786