作者: Lijun Liu , Xiaofang Qi , Wencheng Ma , Zaoyang Li , Yunfeng Zhang
DOI: 10.1155/2015/513639
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摘要: A crucible cover was designed as gas guidance to control the flow in an industrial directional solidification furnace for producing high purity multicrystalline silicon. Three designs were compared investigate their effect on impurity transport and contamination of silicon melt. Global simulations coupled oxygen (O) carbon (C) carried out predict SiO CO gases well O C distributions Cases with without chemical reaction surfaces investigated. It found that design has little concentration melt; however, it significantly influences chamber For covers made metal or a coating surfaces, optimal can produce melt free contamination. Even graphite coating, be reduced by one order magnitude. The simulation results demonstrate method impurities design.