作者: Vikram C Sundar , Jana Zaumseil , Vitaly Podzorov , Etienne Menard , Robert L Willett
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摘要: We introduce a method to fabricate high-performance field-effect transistors on the surface of freestanding organic single crystals. The transistors are constructed by laminating a monolithic elastomeric transistor stamp against the surface of a crystal. This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as∼ 15 cm2/V· s and subthreshold slopes as low as 2nF· V/decade· cm2. Multiple relamination of …