作者: Yogesh Singh , A. Ellern , D. C. Johnston
DOI: 10.1103/PHYSREVB.79.094519
关键词:
摘要: Abstract Growth of BaMn 2 As 2 crystals using both MnAs and Sn fluxes is reported. Room-temperature crystallography, anisotropic isothermal magnetization M versus field H and magnetic susceptibility χ versus temperature T, electrical resistivity in the ab plane ρ (T), and heat capacity C (T) measurements on the crystals were carried out. The tetragonal ThCr 2 Si 2-type structure of BaMn 2 As 2 is confirmed. After correction for traces of ferromagnetic MnAs impurity phase using M (H) isotherms, the inferred intrinsic χ (T) data of the crystals …