Effect of sintering temperature on the chemical bonding, electronic structure and electrical transport properties of β-Ga1.9Fe0.1O3 compounds
作者： Swadipta Roy , C.V. Ramana
DOI: 10.1016/J.JMST.2020.05.072
关键词:
摘要: Abstract A model system, which is based on iron (Fe) doped gallium oxide (Ga2O3) (Ga1.9Fe0.1O3), has been considered to elucidate the combined effect of transition-metal ion doping and processing temperature chemistry, local structure chemical bonding, electrical transport properties a wide band gap (Ga2O3). The Ga1.9Fe0.1O3 compounds were synthesized using standard high-temperature solid state reaction method. conditions in terms different calcination sintering environments structural studied detail. Structural characterization by Raman spectroscopy revealed that exhibit monoclinic crystal symmetry, quite similar intrinsic parental structure, though Fe-doping induces lattice strain. Sintering (Tsint) was varied range 900−1200 °C, significant impact compounds. spectroscopic measurements indicate proper densification achieved through complete Fe diffusion into parent Ga2O3 evident at highest temperature. X-ray photoelectron validates states constituent elements fully controlled Tsint, governed grain size microstructural evolution. frequency dependent demonstrated salient features activation energy determined from Arrhenius equation ∼0.5 eV. results demonstrate control over morphology, chemistry can be optimizing Tsint.
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