High‐resolution determination of the stress in individual interconnect lines and the variation due to electromigration

摘要: Large tensile stresses usually exist in metallic interconnect lines on silicon substrates as a result of thermal mismatch. When current is subsequently passed any divergence atomic flux can create superimposed stress variations along the line. Together, these significantly influence growth voids and therefore affect reliability. In this work, high‐resolution (∼2 μm) optical spectroscopy method has been used to measure localized around passivated aluminum wafer, both as‐fabricated after electromigration testing. The based piezospectroscopic properties silicon, specifically frequency shift Raman line at 520 R cm−1. By focusing laser beam points adjacent lines, signal was excited collected. then be derived from using finite element methods. an electromigration‐tested lin...