Organic Mott insulator-based nanowire formed by using the Nanoscale-electrocrystallization
作者： Hiroyuki Hasegawa , Yutaka Noguchi , Rieko Ueda , Tohru Kubota , Shinro Mashiko
DOI: 10.1016/J.TSF.2007.04.057
关键词:
摘要: Abstract We obtained organic Mott insulator nanowire by using the Nanoscale-electrocrystallization. The ac electrocrystallization provided nanowires only in gap between two electrodes though dc yielded them over anode surface. These ranged width from 50 nm to several hundred nm and were μm length. also measured their i–V characteristics.
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