ESD Transient Model of Vertical DMOS Power Devices

摘要: Based on the equivalent circuit of VDMOS,the initial condition and transient response process are analyzed ESD model power VDMOS device is obtained.Results show that discharge correctly depicted with this model,which resolves problem insufficient conditions other models.Based model,the relationships between threshold voltage gate input protection series resistance,breakdown voltage,and parasitic dynamic resistance Zener diodes,and gate-source capacitance oxide thickness VDMOS,are obtained.This can guide design for VDMOSs