Method for ion implanting insulator material to reduce dielectric constant
作者： Kartik Ramaswamy , Kenneth S. Collins , Amir Al-Bayati , Rick J. Roberts , Hiroji Hanawa
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摘要: An integrated microelectronic circuit has a multi-layer interconnect structure overlying the transistors consisting of stacked metal pattern layers and insulating separating adjacent ones said layers. Each is dielectric material with plural gas bubbles distributed within volume to reduce constant material, being formed by ion implantation gaseous species into material.
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