Semi-insulating blocked planar BH GaInAsP/InP laser with high power and high modulation bandwidth
作者： U. Koren , B.I. Miller , G. Eisenstein , R.S. Tucker , G. Raybon
DOI: 10.1049/EL:19880092
关键词:
摘要: A high-power, high-speed GaInAsP/InP laser operating at a 1.3μm wavelength is described. The obtained with three epitaxial growth steps and has semi-insulating InP blocking layers resulting in low parasitic capacitance. 3 dB bandwidth of 14.7 GHz together 38 mW output power been achieved.
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sci-hub.se 参考文章(3)
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