Precise determination of band offsets and chemical states in SiN∕Si studied by photoemission spectroscopy and x-ray absorption spectroscopy
作者： S. Toyoda , J. Okabayashi , H. Kumigashira , M. Oshima , G. L. Liu
DOI: 10.1063/1.2035894
关键词:
摘要: We have investigated chemical states and band offsets in SiN∕Si by photoemission spectroscopy x-ray absorption spectroscopy. N1s spectra SiN for three kinds of layer-thickness films are fitted a single component, suggesting that nitrogen atom is surrounded silicon nine atoms the first second nearest neighbor, respectively. Valence-band between Si substrates determined to be 1.6 eV using valence-band subtracting contribution from substrates. Band gap estimated 5.6–5.7 valence-band, core level, NK-edge-absorption spectra. Furthermore, time-dependent measurements reveal irradiation time significant factor determine precise excluding differential charging effects.
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