Semiconductors for high selectivity thermal emitters

摘要: Selective emitters limit thermal radiation to a narrow spectral band enabling applications including energy conversion and sensing. While demand high selectivity, the materials used for selective ultimate selectivity. At temperatures (>600 K), optical properties of degrade, resulting in poor thus leaving an open question—what material platform makes good emitter? Here, we show that doped semiconductors make choice by predicting their temperature dependent constants wide doping range. We build semi-empirical models predict dependences microscopic processes GaAs Si, polar non-polar semiconductor respectively, demonstrate with small tunable losses enable very selectivity emitters. Our predictions agree reasonably well more complex accurate methods such as variational second order perturbation theories, serve guide discovery development nanophotonics.