作者: D. K. Fork , F. A. Ponce , J. C. Tramontana , T. H. Geballe
DOI: 10.1063/1.104903
关键词:
摘要: … -oxide, we have adopted a room-temperature technique entitled spin etching’ for removing the oxide … The H prevents Si oxidation in air, and remains bonded to Si until the substrate is …