摘要: Publisher Summary Conducting metal oxide thin films such as TCO, RuO2, IrO2, SrRuO3, and La0.5Sr0.5CoO3 have been extensively investigated because of their potential applications in the field microelectronic devices. The exceptional spectrum properties exhibited by conducting oxides makes these materials very unique compared to conventional metallic conductors. In addition that result from integrating conductive with semiconductor materials, advantages using are tremendous next generation electronic devices based on all-oxide materials. For many applications, it is necessary superlative conductivity optical transparency. From a point view, important explore highly degenerated large carrier mobility. Large mobility enhances electrical without degrading properties. development high-performance p-type transparent also for fabrication all-oxide-based active It optimize processing conditions not only can produce desired but compatible