Leveraging Silicon Epitaxy to Fabricate Excellent Front Surface Regions for Thin Interdigitated Back Contact Solar Cells

摘要: Epitaxy can be used to fabricate doped front surface regions that enable high interdigitated back contact (IBC) silicon solar cell efficiency. One- and two-dimensional simulations show an epitaxial layer with a constant phosphorus dopant concentration on the order of 1017 -1018 cm-3 possess properties excellent region for n-type IBC cell. With appropriate control thickness, epitaxially grown passivates textured surface, provides lateral conductivity necessary fill factor. The combination these two factors drives simulated efficiency improvement above 0.3% absolute over typical 200-Ω/sq diffusion (e.g., from POCl3). Importantly, occupy entire volume pyramidal texture. We, therefore, propose exemplary process sequence device fabrication places texture etching after growth.