Complexes of Spatially Multistable Defects as the Source of 1/f Noise in GaAs Devices
作者： EVGENY I. SHMELEV , ALEXEY V. KLYUEV , ARKADY V. YAKIMOV
DOI: 10.1142/S0219477513500089
关键词:
摘要: In order to determine the origin of 1/f noise in devices made on basis GaAs structure and spatial multistability mechanism complexes defects originated by donor–acceptor pairs are researched. Examples complexes, which potentially exist n-GaAs:Si, such as SiAsSiGa, VGaSiGa, VGaVAs, VAsSiAs VGaISi. For instance, VGaSiGa complex contains a gallium vacancy (VGa) an atom silicon (SiGa), substitutes nearest crystal lattice. The entire is linked with influence Jahn–Teller effect or one its elements. ability be sources analyzed. It assumed that may generated influenced effect.
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