Revisiting Nitride Semiconductors: Epilayers, p-Type Doping and Nanowires

E. M. Baitinger, Electrical and Optical Properties Springer, Dordrecht. pp. 333- 341 ,(1999) , 10.1007/978-94-011-4742-2_22

B.M. Kayes, C.E. Richardson, N.S. Lewis, H.A. Atwater, Radial pn junction nanorod solar cells: device physics principles and routes to fabrication in silicon photovoltaic specialists conference. pp. 55- 58 ,(2005) , 10.1109/PVSC.2005.1488067

D C Look, R L Jones, X L Sun, L J Brillson, J W Ager, S S Park, J H Han, R J Molnar, J E Maslar, Electrical and optical properties of GaN/Al2O3 interfaces Journal of Physics: Condensed Matter. ,vol. 14, pp. 13337- 13344 ,(2002) , 10.1088/0953-8984/14/48/386

Marian A. Herman, Helmut Sitter, Molecular Beam Epitaxy: Fundamentals and Current Status ,(2012)

V. Lebedev, F.M. Morales, V. Cimalla, J.G. Lozano, D. González, M. Himmerlich, S. Krischok, J.A. Schaefer, O. Ambacher, Correlation between structural and electrical properties of InN thin films prepared by molecular beam epitaxy Superlattices and Microstructures. ,vol. 40, pp. 289- 294 ,(2006) , 10.1016/J.SPMI.2006.07.006

D. M. Eigler, E. K. Schweizer, Positioning single atoms with a scanning tunnelling microscope Nature. ,vol. 344, pp. 524- 526 ,(1990) , 10.1038/344524A0

Hwa-Mok Kim, Yong-Hoon Cho, Hosang Lee, Suk Il Kim, Sung Ryong Ryu, Deuk Young Kim, Tae Won Kang, Kwan Soo Chung, None, High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays Nano Letters. ,vol. 4, pp. 1059- 1062 ,(2004) , 10.1021/NL049615A

F. Widmann, G. Feuillet, B. Daudin, J. L. Rouvière, Low temperature sapphire nitridation: A clue to optimize GaN layers grown by molecular beam epitaxy Journal of Applied Physics. ,vol. 85, pp. 1550- 1555 ,(1999) , 10.1063/1.369286

I. Mahboob, T. D. Veal, C. F. McConville, H. Lu, W. J. Schaff, Intrinsic electron accumulation at clean InN surfaces. Physical Review Letters. ,vol. 92, pp. 036804- ,(2004) , 10.1103/PHYSREVLETT.92.036804

H. Yamashita, K. Fukui, S. Misawa, S. Yoshida, Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region Journal of Applied Physics. ,vol. 50, pp. 896- 898 ,(1979) , 10.1063/1.326007