Effect of the Al 2 O 3 interfacial layer thickness on the measurement temperature-induced I--V characteristics in Au/Ti/Al 2 O 3/n-GaAs structures
作者： Abdulmecit , Turut and Abdulkerim , Karabulut and Hasan , Efeoǧlu
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摘要: We prepared the Au/Ti/Al 2 O 3/n-GaAs MIS (metal/insulating/semiconductor) structures with and without Al 2 O 3 interfacial layer. The diode D1 has the interfacial layer thickness of 3 …
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