Exploring Multifunctionality in MgO‐Based Magnetic Tunnel Junctions with Coexisting Magnetoresistance and Memristive Properties

摘要: Magnetic tunnel junctions (MTJs) and memristors are two key emerging nanotechnologies that attracted significant interest for potential applications at the forefront of the digital revolution, including sensing, data storage, and non‐conventional computation. The co‐integration of these phenomena into a single multifunctional device is an important step toward harnessing the re‐programmability of memristive systems with the high yield and varied functionality of MTJs. This study demonstrates the co‐existence of magnetoresistance and memristive properties on MgO‐based MTJs. These devices show a magnetoresistance with a linear response as a function of a magnetic field and no hysteresis, which are the requirements for good magnetic field sensors, as well as demonstrating a non‐volatile and quasi‐analogue memristive behavior as a function of an applied electrical field down to nanosecond pulses …