Tuning Ultrafast Carrier Dynamics and Broadband Photo-Response of High-Performance Sb2Se3 Thin Film Photodetectors: A Substrate Dependent Study

摘要: In the field of photodetectors, antimony selenide (Sb2Se3) is one of the materials exhibiting wideband photo response, characterized by its suitable bandgap and fast response time. However, apart from these fascinating properties, substrate compatibility plays a vital role in defining the device’s efficiency. The present study investigates the varying broadband photo response of thermally grown antimony selenide (Sb2Se3) films on various substrates (Al2O3, SiO2, quartz, and pyramidal sapphire). The devices Au/Sb2Se3/Al2O3, Au/Sb2Se3/quartz, and Au/Sb2Se3/SiO2 show the highest responsivity of 79 mA/W in NIR, 150 mA/W in visible, and 245 mA/W in UV, respectively. Moreover, the device Au/Sb2Se3/Al2O3 demonstrated the fastest response time of 230 ms. Notably, the Sb2Se3 device on pyramidal-patterned sapphire shows the least responsivity across the wide band compared with other devices. To delve …