Low‐Frequency Noise Behavior at Low Temperature (80K–300K) of Silicon Passivated Ge pMOSFETs with High‐K Metal Gate Stack

摘要: The low frequency noise performance of pMOSFETs with high‐K and metal gate on epitaxial Germanium (Ge) on silicon (Si) substrates from 300K down to 80K has been investigated. The gate stack consists of a TiN/TaN metal gate on top of a 1.3nm EOTHfO2‐SiO2 gate dielectric bi‐layer. A typical flicker 1 /f type noise has been observed for all temperatures studied, which obeys number fluctuations for intermediate gate voltage. The temperature dependence of mobility μ and surface trap effective density Dt have also been analysed.