Reliability and scaling perspectives of HfO2-Based OxRAM

摘要: OxRAM is a strong candidate to replace embedded Flash technology at scaled nodes. This is justified by several considerations but mainly driven by the low cost of integration and very high compatibility with standard CMOS technology. Yet OxRAM faces tremendous challenges in terms of reliability, variability and scaling. In this paper we review the reliability of our Ti/HfO2 (5nm)/TiN cell. Controlling LRS and HRS resistance distributions can be achieved with a proper write/erase algorithm design and it is a key point to enable large array integration. A proper write/erase sequence ensures long bit endurance up to 107 cycles. Data retention is then evaluated at 125, 165, 200 and 260 C showing the impact of device aging on retention performance. Next, we show how the OxRAM cell can be successfully integrated with a short-channel (L= 30nm) 28nm-like low voltage MOS selector and we demonstrate the …