Temperature dependent antisymmetric planar Hall effects in Co {sub 2} FeAl {sub x} Si {sub y} Heusler alloys

摘要: Very promising candidates for future spintronic devices are Co-based Heusler alloys like Co{sub 2}FeAl{sub x}Si{sub y}, which generally possess a high Curie temperature and a high spin polarization (>0.5). Here we report on magnetoresistance measurements of {mu}m-wide nanowires using contacts in longitudinal magnetoresistance (AMR) and Hall geometry (planar Hall effect (PHE)). For the AMR we observe an overall decrease in resistance with increasing field, whilst first results indicate an antisymmetric contribution in the PHE, whose origin is still under debate. A correlation to crystal symmetry was suggested for semiconductors. We therefore study its dependence on applied field, field angle, temperature and the direction of growth on the substrate to gain further insight into this effect.