Methods for selective deposition of metal silicides via atomic layer deposition cycles

摘要: Methods for selectively depositing a metal silicide layer are provided herein. In some embodiments, a method of selec tively depositing a metal silicide layer includes:(a) provid ing a substrate having a first layer to a process chamber, wherein the first layer comprises a first surface and a feature formed in the first surface comprising an opening defined by one or more sidewalls and a bottom surface wherein the sidewalls comprise one of silicon oxide or silicon nitride and wherein the bottom surface comprises at least one of silicon or germanium;(b) exposing the substrate to a precursor gas comprising a metal halide;(c) purging the precursor gas from the process chamber using an inert gas;(d) exposing the substrate to a silicon containing gas;(e) purging the silicon containing gas from the process chamber using an inert gas;(f) repeating (b)-(e) to selectively deposit a metal silicide along the bottom surface to a …