Effects of thermal annealing on thermal conductivity of LPCVD silicon carbide thin films

摘要: The thermal conductivity (k) of polycrystalline SiC thin films is relevant for thermal management in emerging SiC applications like microelectromechanical and optoelectronic devices. In such films, k can be substantially reduced by microstructure features including grain boundaries, thin film surfaces, and porosity, although these microstructural effects can also be manipulated through thermal annealing. Here, we investigate these effects by using microfabricated suspended devices to measure the thermal conductivities of nine low-pressure chemical vapor deposition SiC films of varying thicknesses (from 120 to 300 nm) and annealing conditions (as-grown and annealed at 950 and 1100 C for 2 h, and in one case 17 h). Fourier-transform infrared spectroscopy, x-ray diffraction spectra, and density measurements are also used to characterize the effects of annealing on the microstructure of selected samples …