Quantifying temperature dependence of electronic band gaps and optical properties in SnO2 and SnO via first-principles simulations

摘要: Tin metal oxides SnOx (x = 1, 2) have gained interest as gas-sensing materials. For their applications as high-temperature sensors, however, a better understanding of their temperature dependence sensing responses is needed. In this work, we comparatively quantify the temperature-dependent electronic band gaps and optical properties of SnO2 and SnO using first-principles calculations. Without considering the temperature effect, SnO2 and SnO are predicted to have direct and indirect band gaps of 2.18 and 1.66 eV, respectively, at the PBE + U-GGA level that we employed. The temperature effect on the electronic and optical properties is captured by taking account of the electron–phonon interaction. Band gap renormalization with temperature is calculated via the Allen–Heine–Cardona theory. For both oxides, we find a monotonic decrease in the electronic band gap such that renormalization at zero point (0 K …