Memory effect of Mn5Ge3 nanomagnets embedded inside a Mn-diluted Ge matrix

摘要: Crystalline Mn 5 Ge 3 nanomagnets are formed inside a Mn-diluted Ge matrix using Mn ion implantation. A temperature-dependent memory effect and slow magnetic relaxation are observed below the superparamagnetic blocking temperature of Mn 5 Ge 3⁠. Our findings corroborate that the observed spin-glass-like features are caused by the size distribution of Mn 5 Ge 3 nanomagnets, rather than by the interparticle interaction through the Mn-diluted Ge matrix.