CMOS-Compatible Ferroelectric Materials and Structures

作者: E Rafie Borujeny , Y Shao , T Kim , JA del Alamo

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摘要: Ferroelectrics are a class of materials that exhibit a nonlinear relationship between the externally applied electric field (E) and the electric polarization (P) formed inside them. In addition, they show a spontaneous nonzero polarization even when no external E is applied (Figure 1a). Moreover, the value of P in ferroelectric materials depends not only on the value of E but also on its history (for example, note in Figure 1 that at E= 0, P can have two values depending on whether we reach E= 0 from E> 0 or from E< 0). Having a spontaneous and history-dependent polarization means that ferroelectric materials can be incorporated into electronic devices to act as non-volatile memory elements. Our research focuses on high-quality complementary metal-oxide semiconductor-(CMOS) compatible ferroelectrics that can be incorporated into nanometer-scale electronic devices. We specifically focus on developing ferroelectric …

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