Electrical properties of Mg doped ZnO nanostructure annealed at different temperature

摘要: In this work, ZincOxide (ZnO) nanostructures doped with Mg were successfully grown on the glass substrate. Magnesium (Mg) metal element was added in the ZnO host which acts as a doping agent. Different temperature in range of 250oC to 500oC was used in order to investigate the effect of annealing temperature of ZnO thin films. Field Emission Scanning Electron Microscopy (FESEM) was used to investigate the physical characteristic of ZnO thin films. FESEM results have revealed that ZnO nanorods were grown vertically aligned. The structural properties were determined by using X-Ray Diffraction (XRD) analysis. XRD results showed Mg doped ZnO thin have highest crystalinnity at 500oC annealing temperature. The electrical properties were investigating by using Current-Voltage (IV) measurement. IV measurement showed the electrical properties were varied at different annealing temperature. The …