Exploring Topological Transport in Pt $ _2 $ HgSe $ _3 $ Nanoribbons: Insights for Spintronic Device Integration

摘要: The discovery of the quantum spin Hall effect led to the exploration of the electronic transport for spintronic devices. Here, we theoretically investigated the electronic conductance in large-gap realistic quantum spin Hall system, PtHgSe nanoribbons. By an ab initio approach, we found that the edge states present a penetration depth of about \,{nm}, which is much smaller than those predicted in other 2D topological systems. Thus, suggesting that PtHgSe allows the exploitation of topological transport properties in narrow ribbons. Using non-equilibrium Green's functions calculations, we have examined the electron conductivity upon the presence of Se\,\,Hg antistructure defects randomly distributed in the PtHgSe scattering region. By considering scattering lengths up to \,nm, we found localization lengths that can surpass m sizes for narrow nanoribbons (\,nm). These findings can contribute to further understanding the behavior of topological insulators under realistic conditions and their integration within electronic, spintronic devices.