Enhanced scalability and reliability of InGaZnO thin-film transistor using a combination of plasma fluorination and thermal oxidization

摘要: Enhanced Scalability and Reliability of InGaZnO Thin-Film Transistor Using a Combination of Plasma Fluorination and Thermal Oxidization | Article Information | J-GLOBAL Art J-GLOBAL ID:202102247219223565 Reference number:21A0834579 Enhanced Scalability and Reliability of InGaZnO Thin-Film Transistor Using a Combination of Plasma Fluorination and Thermal Oxidization プラズマフッ素化と熱酸化の組み合わせによるInGaZnO薄膜トランジスタの 拡張性と信頼性の向上 Publisher site Copy service Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=21A0834579&from=J-GLOBAL&jstjournalNo=L4269B") }} Author (8): LU Lei About LU Lei Search "200901100538915745" Search "LU Lei" (HKUST Jockey Club Inst. for Advanced Study, HKG) About HKUST Jockey Club Inst. for Advanced Study, HKG Search "202151000165799210" Search "…