摘要: 正 High-performance top-emitting white organic light-emitting devices (WOLED), using A1 as the reflective bottom anode and LiF/Ca/Au as the semitransparent top cathode, were fabricated. Nanometers Au/V_2O_5 layer was deposited on Al an-ode for holes injection enhancement and the top cathode was capped with additional Alq_3 layer as the dielectric capping layer for increasing its transmittance. Using three emissive layers with red, green, blue phosphorescent emitters respective-ly, the WOLED showed a maximum external quantum efficiency of 9.1% and a maximum power efficiency of 12.8 lm/W. Broadband emission spectra with a very weak angular dependence were achieved. The emission in normal direction has a Commission Internationale de L'Eclairage coordinates of (x= 0.36, y= 0.43). The characteristics of this top-emit-ting WOLED are competitive with those of the corresponding bottom-emitting device.