Radiation of surface streamer discharges in semiconductors

摘要: The surface streamer discharges in CdS and ZnSe at 300 and 77 K have been detected and investigated. It has been shown that streamers propagate in the layer of the thickness of less than 5 ..mu..m, and that the appearance and propagation of discharges is essentially affected by the state of crystal surface, its orientation and also by the dielectric liquid type. It has been found that the mean concentration of charge carriers in the streamer channel constitutes the value on the order of 10/sup 17/ cm/sup -3/. It is assumed that streamer luminescence is due to both recombination in electron-hole plasma and exciton channel.