Negative differential resistance in photoassisted field emission from Si nanowires

摘要: Field emission (FE) from semiconducting nanowires (NWs) is studied for expanding electron gun performances and functionality in terms of stability, brightness, and pulsed emission. Here, we report on a pronounced and robust double negative differential resistance (NDR) in the FE IV characteristics measured during photoassisted field emission experiments on highly crystalline p-type silicon NWs. The main feature is a double NDR in the current saturation regime, which can be modulated by both temperature and light intensity. These results contrast with previous FE studies in which only a barely noticeable single NDR was reported. Several mechanisms for the physical explanation of the NDR are currently under consideration: photogenerated carrier instabilities in the depletion region, which give rise to a pulsed space-charge current in the nanowire or tunneling through a double quantum well formed by …