PHYSICS, CHEMISTRY AND APPLICATION OF NANOSTRUCTURES, 2001 INVITED STRESS AND STRAIN DISTRIBUTIONS IN Ge DOTS ON Si (001) BY MOLECULAR DYNAMICS SIMULATION.

摘要: By applying molecular dynamics simulation with a three-body potential for SiGe we have studied the elastic interaction between realistic SiGe dots and Si (001) substrate. Stress and strain distributions were computed indicating a complex and deep deformation of the substrate and a slight relaxation in the Ge pyramid.