Electrical transport at bilayer graphene domain wall

摘要: Layer-stacking domain wall in bilayer graphene strongly alters its electronic properties and gives rise to fascinating new physics such as quantum valley Hall edge states. In our previous works, we demonstrated that the domain wall can be visualized by near-field infrared microscopy and we can control their movement with an AFM tip. To get a comprehensive understanding of such topological defect, we study the electrical transport at bilayer graphene domain wall in this work.