Gating operation of transport current in graphene nanoribbon fabricated by helium ion microscope

摘要: Graphene, a two-dimensional sheet of carbon atoms [1], is a promising channel material for future transistors because of its extremely high carrier mobility as high as 200,000 cm2/Vs for both electrons and holes [2, 3]. Such high mobility, along with the immunity to short channel effect due to atomically thin body [4], enables super high-speed and ultra low-energy consumption LSIs. For the application of graphene to electronics, however, there is a serious bottleneck, that is, a difficulty in generating an energy band gap. Graphene nanoribbon (GNR) is considered as one of the solutions for this issue, but it requires an extremely high spatial resolution better than 10 nm, which is quite difficult for the current lithography technique. Chemically derived [5], or CNT unzipped [6] GNRs are possible alternatives, but these bottom-up processes are not industrially feasible for device integration. A Helium Ion Microscope (HeIM …