Selective Area Epitaxy of current blocking layers for Vertical Cavity Surface Emitting Laser application

摘要: We have investigated epitaxial regrowth of current blocking layers used for current confinement in Vertical Cavity Surface Emitting Lasers (VCSELs). The epitaxial regrowth of p and n-type layers has been done around etched mesas with different orientations of the sidewalls and at different growth temperatures using metal organic vapor phase epitaxy (MOVPE). We have found that the regrowth around the rigdes in [101] and [011] directions produces hillocks whereas regrowth on the wafer with the stripes in the [010] direction produces no hillock. We conclude that the shape of the regrown layers depends on the orientation of the crystal planes of the sidewalls but not much on the growth temperature.