Photoindentation: a method to understand dislocation behavior of inorganic semiconductors in light at the nanoscale

摘要: Photoindentation: A Method to Understand Dislocation Behavior of Inorganic Semiconductors in Light at the Nanoscale | Article Information | J-GLOBAL Art J-GLOBAL ID:202202253960488467 Reference number:22A0065205 Photoindentation: A Method to Understand Dislocation Behavior of Inorganic Semiconductors in Light at the Nanoscale 無機半導体中の転位挙動に 及ぼす光環境効果の理解に向けたナノスケール力学試験手法の開拓 Publisher site {{ this.onShowPLink() }} Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=22A0065205©=1") }} Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=22A0065205&from=J-GLOBAL&jstjournalNo=F0691A") }} Author (8): NAKAMURA ATSUTOMO About NAKAMURA ATSUTOMO Search "200901100313072765" Search "NAKAMURA …