作者: Ganesh Shridhar Hegde , AN Prabhu , MK Chattopadhyay
DOI:
关键词:
摘要: The melt-grown, indium and selenium co-doped Bi2Te3 single-crystal system is studied with a purpose to improve and analyze the thermoelectric performance in the low and near room-temperature range (10–400 K). The influence of co-dopants on the crystalline perfection, symmetry, dislocation, and single-crystal quality is investigated using high-resolution X-ray diffraction. The surface morphological features show the existence of small-angle grain boundaries, white patches, and tilt boundaries. Degenerate type of semiconducting behavior is seen in all the samples over the entire temperature range. The existence of small polarons is experimentally inferred from temperature-dependent electrical resistivity. Measurement of Seebeck coefficient confirms p- to n-type transition in the crystals doped with indium and selenium. The total thermal conductivity at 11 K was decreased by 3.4 times in (Bi0.98In0.02)2Te2.7Se …