Electronic structure study of Sn-substituted InP semiconductor

摘要: Indium phosphide (InP) semiconductor is a well-nown binary semiconductor. The electronic properties have helped this material gain high popularity due to its desired semiconductor properties. In this study, the InP semiconductor was processed with Sn substitution in the indium coordination to probe the influence of electronic interplays on the electronic properties of semiconductor materials. The study is carried by the x-ray absorption fine structure (XAFS) spectroscopy calculations. Tin is one of the most popular metal used in recent technology due to its potential to emerge desired electronic properties. The calculations were performed by the commercial code FEFF 8.2 for a 10 Å thic cluster. The results showed a possible application of Sn substitution can yield better semiconductor properties in an electronic device application.