Structural and microwave dielectric behavior of (Li {sub 1/4} Nb {sub 3/4}) substituted Zr {sub x} Sn {sub y} Ti {sub z} O {sub 4}(x+ y+ z= 2) system

摘要: The phase structure, microwave dielectric properties, and their stability with different annealing conditions have been investigated in (Li{sub 1/4}Nb{sub 3/4}) substituted Zr{sub x}Sn{sub y}Ti{sub z}O{sub 4} system. The sintering temperature of Zr{sub x}Sn{sub y}Ti{sub z}O{sub 4} ceramic was lowered from 1500 to 1140 deg. C by (Li{sub 1/4}Nb{sub 3/4}) substitution. Both X-ray diffraction (XRD) analysis and electron diffraction (ED) analysis revealed that the (Li{sub 1/4}Nb{sub 3/4}) substituted Zr{sub x}Sn{sub y}Ti{sub z}O{sub 4} ceramic crystallized as the high-temperature disordered ZrTiO{sub 4} phase. As the content of Sn increased from 0.10 to 0.30, the permittivity of the (Zr{sub 1-x}Sn{sub x})(Li{sub 1/4}Nb{sub 3/4}){sub 0.4}Ti{sub 0.6}O{sub 4} ceramic decreased gradually from 35.5 to 31.5, the Q{sub f} value increased from 37,800 to 58,300 GHz, and TCF value shifted slightly from -4.5 to -33.0 ppm deg. C{sup -1}. Both the phase structure and microwave dielectric properties of (Zr{sub 1-x}Sn{sub x})(Li{sub 1/4}Nb{sub 3/4}){sub 0.4}Ti{sub 0.6}O{sub 4} ceramics were stable with annealing conditions.