作者: Wei-Lun Chen , Shang Shian Yang , Ning Hsiu Yuan , Wei Yu Zhou , Yu-Pu Yang
DOI:
关键词:
摘要: In this study, the minimum residual stress of aluminum nitride (AlN) thin films was obtained controllably using a multi-step deposition technique in a pulsed DC sputtering system. The link between film crystal orientation and residual stress received from X-ray diffraction (XRD) data analyses on this growing AlN experiment was investigated by the comparison of film stress characteristics between one-step deposition and multi-step deposition. The structure, thickness, crystalline status and residual stress of AlN thin films were measured using scanning electron microscope (SEM), atomic force microscope (AFM) and X-ray diffraction (XRD) respectively. The results reveal that, under the same processing duration, with various intervals of deposition, the AlN film has a distinct structure with various stress properties. It can be concluded from this experiment that the AlN film residual stress can be effectively reduced by multi …