Analysis of the junction properties of C/GaSe 0.5 S 0.5/C back-to-back Schottky-type photodetectors

摘要: In this paper, a C/GaSe 0.5 S 0.5 /C metal-semiconductor-metal photodetector is suggested and described. The device is explored by means of current-voltage and capacitance-voltage (C-V) characteristics under different photoexcitation intensities. It was observed that the design of the back-to-back Schottky device has reduced the dark current of the normal Ag/GaSe 0.5 S 0.5 /C Schottky diode by 13 times and increased the photosensitivity from 3.8 to ~2.1×10 3 . The device exhibited a barrier height of 0.842 eV in the dark. The barrier height is reduced via photoexcitation. In addition, the C/GaSe 0.5 S 0.5 /C device exhibited an ON/OFF switching property from low injection OFF to high injection ON at specific biasing voltages. This voltage decreased with the increasing illumination intensity. On the other hand, the C-V characteristics of the device, which was recorded for an ac input signal with 100 MHz at different …